Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices
Identifieur interne : 00C223 ( Main/Repository ); précédent : 00C222; suivant : 00C224Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices
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Abstract
We have investigated the mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices. Using cross-sectional scanning tunneling microscopy, we determined the lateral spacing between dot columns in a series of five-period dot superlattices annealed for various times. As the annealing time is increased, the average column spacing increases, while the distribution of column spacings is broadened. A comparison with earlier studies of one-, five-, ten-, and twenty-period dot superlattices suggests that the lateral column spacing is determined by strain-enhanced bulk diffusion. We propose a conceptual model for self-ordering of quantum dot superlattices based upon a combination of island nucleation plus strain-enhanced island dissolution. © 2003 American Vacuum Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices</title><author><name sortKey="Chen, W" uniqKey="Chen W">W. Chen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Shin, B" uniqKey="Shin B">B. Shin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Goldman, R S" uniqKey="Goldman R">R. S. Goldman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Stiff, A" uniqKey="Stiff A">A. Stiff</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Bhattacharya, P K" uniqKey="Bhattacharya P">P. K. Bhattacharya</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0351611</idno><date when="2003-07">2003-07</date><idno type="stanalyst">PASCAL 03-0351611 AIP</idno><idno type="RBID">Pascal:03-0351611</idno><idno type="wicri:Area/Main/Corpus">00CC94</idno><idno type="wicri:Area/Main/Repository">00C223</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science and technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Diffusion</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Island structure</term><term>Nucleation</term><term>STM</term><term>Semiconductor quantum dots</term><term>Semiconductor superlattices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865H</term><term>6172C</term><term>6837E</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Superréseau semiconducteur</term><term>Point quantique semiconducteur</term><term>STM</term><term>Recuit</term><term>Structure îlot</term><term>Nucléation</term><term>Diffusion(transport)</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have investigated the mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices. Using cross-sectional scanning tunneling microscopy, we determined the lateral spacing between dot columns in a series of five-period dot superlattices annealed for various times. As the annealing time is increased, the average column spacing increases, while the distribution of column spacings is broadened. A comparison with earlier studies of one-, five-, ten-, and twenty-period dot superlattices suggests that the lateral column spacing is determined by strain-enhanced bulk diffusion. We propose a conceptual model for self-ordering of quantum dot superlattices based upon a combination of island nucleation plus strain-enhanced island dissolution. © 2003 American Vacuum Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1071-1023</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</s0></fA03><fA05><s2>21</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices</s1></fA08><fA11 i1="01" i2="1"><s1>CHEN (W.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHIN (B.)</s1></fA11><fA11 i1="03" i2="1"><s1>GOLDMAN (R. S.)</s1></fA11><fA11 i1="04" i2="1"><s1>STIFF (A.)</s1></fA11><fA11 i1="05" i2="1"><s1>BHATTACHARYA (P. K.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>1920-1923</s1></fA20><fA21><s1>2003-07</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11992 B</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0351611</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of vacuum science and technology. B. Microelectronics and nanometer structures. 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